Silicon photodiodes with high sensitivity and low dark current, as well as silicon PIN
photodiodes suitable for high-speed applications.
Silicon photodiode array is a sensor with multiple Si photodiodes arranged in a single package.
It can be used in a wide range of applications such as light position detection, imaging, and
Silicon photodiode arrays combined with signal processing integrated circuits (IC). Driver
circuits available for easy implementation.
InGaAs photodiodes for near-infrared light detection. Features include high speed, high
sensitivity, low noise, and spectral responses ranging from 0.5 μm to 2.6 μm.
High-precision photodetectors that integrate a silicon, InGaAs, or InAsSb photodiode and a
Current-to-voltage conversion amplifiers that make our photodiodes easier to use.
Modules composed of silicon photodiodes, beam splitters, filters, and a current-to-voltage
conversion circuit. Designed for absorbance measurement requiring high blocking
performance and low noise.
These are differential ampliﬁcation type photoelectric conversion modules containing two
Hamamatsu photodiodes with balanced characteristics. Used in applications such as