Type number |
C9100-24B |
Camera head type |
Hermetic vacuum-sealed air/water-cooled head*1 |
Window |
Anti-reflection (AR) coatings on both sides, single window |
AR mask |
No |
Imaging device |
Electron Multiplying Back-Thinned Frame Transfer CCD |
Effective number of pixels |
1024 (H)×1024 (V) |
Cell size |
13 μm (H)×13 μm (V) |
Effective area |
13.3 mm (H) × 13.3 mm (V) |
Pixel clock rate (EM-CCD readout) |
22 MHz, 11 MHz, 0.6875 MHz |
Pixel clock rate (NORMAL CCD readout) |
0.6875 MHz |
EM (electron multiplying) gain |
1×, 10× to 1200× (typ.)*2 |
Ultra low light detection |
Photon Imaging mode (1, 2, 3) |
Fastest readout speed |
18.5 frames/s to 314 frames/s*3 |
Readout noise (EM-CCD readout) |
15 electrons (EM gain 4×, at 22 MHz) (rms) (typ.)
10 electrons (EM gain 4×, at 11 MHz) (rms) (typ.)
3 electrons (EM gain 4×, at 0.6875 MHz) (rms) (typ.)
1 electron max. (EM gain 1200×) (rms) (typ.) |
Readout noise (NORMAL CCD readout) |
10 electrons (at 0.6875 MHz) (rms) (typ.) |
Full well capacity |
EM-CCD readout: 400 000 electrons (Max. 800 000 electrons) (typ.)*4
NORMAL CCD readout: 50 000 electrons (typ.) |
Analog gain |
EM-CCD readout (22 MHz): 1×
EM-CCD readout (11 MHz/0.6875 MHz): 0.5×, 1×
Normal CCD readout: 1×, 2×, 3×, 4×, 5× |
Cooling temperature (Forced-air cooled) |
At temperature control: -50 ℃ (Room temperature 0 ℃ to +30 ℃, at 22 MHz)
At temperature control: -55 ℃ ((Room temperature 0 ℃ to +30 ℃, 11 MHZ, 0.6875 MHz. Normal CCD readout)
At maximum cooling (typ.): -65 ℃ (Room temperature: stable at +20 ℃) |
Cooling temperature (Water cooled) |
At temperature control: -65 ℃ (Water temperature: +20 ℃, at 22 MHz)
At temperature control: -70 ℃ (Water temperature: +20 ℃, 11 MHZ, 0.6875 MHz. Normal CCD readout)
At maximum cooling (typ.): -80 ℃ (Water temperature: lower than +10 ℃) |
Temperature stability (Forced-air cooled) |
±0.01 ℃ (typ.) |
Temperature stability (Water cooled) |
±0.01 ℃ (typ.) |
Dark current (Forced-air cooled) |
0.01 electron/pixel/s (-65 ℃) (typ.) |
Dark current (Water cooled) |
0.001 electron/pixel/s (-80 ℃) (typ.) |
Clock induced charge |
0.01 events/pixel/frame (typ.) |
Exposure time (Internal sync mode) |
52.7 ms to 1 s (22 MHz)
103.2 ms to 2 h (11 MHz)
1616.9 ms to 2 h (0.6875 MHz) |
Exposure time (External trigger mode) |
10 μs to 1 s (22 MHz)
10 μs to 2 h (11 MHz, 0.6875 MHz) |
A/D converter |
16 bit |
Output signal/External control |
IEEE1394b |
Sub-array |
Every 16 lines (horizontal, vertical) size, position can be set |
Binning |
2×2, 4×4 |
External trigger mode |
Edge trigger, Level trigger, Start trigger, Synchronous readout trigger |
Trigger output |
Exposure timing output, Programmable timing output (Delay and pulse length are variable.), Trigger ready output |
Image processing features (real-time) |
Background subtraction, Shading correction, Recursive filter, Frame averaging, Spot noise reducer*5 |
EM gain protection |
EM warning mode, EM protection mode |
EM gain readjustment |
Available |
Lens mount |
C-mount |
Power supply |
AC 100 V to 240 V, 50 Hz / 60 Hz |
Power consumption |
Approx. 140 VA |
Ambient storage temperature |
-10 °C to + 50 °C |
Ambient operating temperature |
0 °C to + 40 °C |
Performance guaranteed temperature |
0 °C to + 30 °C |
Ambient operating/storage humidity |
70 % max. (with no condensation) |